recombination velocity

英 [ˌriːˌkɒmbɪˈneɪʃən vəˈlɒsəti] 美 [ˌriˌkɑmbəˈneɪʃən vəˈlɑːsəti]

网络  复合速率

电力

双语例句

  1. An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.
    我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响，因为其对太阳能电池的最终效率影响很大。
  2. The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
    确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
  3. Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
    同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片表面复合速度增加。
  4. When the surface hole recombination velocity and defect density is bigger, the length of nanowire should not be too long.
    当表面复合速率和体缺陷密度较大时，纳米柱的长度不宜过大。
  5. The theoretic investigation of I-V characteristics showed that, choosing suitable values of the area density of fixed negative charges and the doping concentration of p-AlGaAs, namely establishing with proper height, the recombination velocity on the interface would be decreased remarkably by eight orders approximately.
    其I-V特性理论研究绐果表明，选择合适的负电荷面密度数和Al0.3Ga0.7As层的掺杂浓度，即：建立合适高度的感应势垒，可显著降低界面复合速度近8个数量级。
  6. Application of Photovoltaic Method to Determination of the Surface Recombination Velocity: N type GaAs
    N型GaAs单晶表面复合速度的宽谱光伏测算
  7. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity.
    钝化机理研究获得了表面复合对不同表面掺杂浓度晶体硅太阳电池性能的影响、表面和界面复合速度的理论表达式；
  8. An analytical study of the effective recombination velocity at the interface of such a high-low junction has been made.
    在此情况下，对高低结界面的有效复合速度作了解析分析。
  9. It was found that the role of the high order modes can be considerably minimized by using penetrating light, sample of large size and low surface recombination velocity. The bulk lifetime of the filament can than be more accurately determined.
    在测量时使用贯穿光、大尺寸样品、及使样品表面复合速度较低时，高次模的作用可以减少，因而能准确测得体寿命。
  10. After the ultraviolet irradiation, it is observed that the surface recombination velocity and the sample resistance are increased, the bulk minority lifetime is decreased.
    紫外辐照使碲镉汞样品的电阻明显增大，样品的表面复合速度上升，少子体寿命下降。说明紫外辐射不仅对碲镉汞样品的表面有影响，而且对碲镉汞体内也有影响。
  11. The effective surface recombination velocity at the interface of diffused n+ n high-low junction in solar cells
    太阳电池扩散N~+N高低结界面的有效表面复合速度
  12. The calculation shows that, for normal surface recombination velocity, the optimum thickness of p-type InSb at 77 ° K is about 3 μ m.
    计算表明，77°K、P型InSb光导器件，在通常的表面复合速度下，最佳厚度约3μm。
  13. The curve simulation results showed that foreign GaAs photocathodes have low interface recombination velocity, and surface escape probability and electron diffusion length have been improving from standard Gen III to Gen IV, which led to increase of sensitivity the GaAs photocathodes.
    曲线拟合结果表明国外GaAs光电阴极的后界面复合速率较低，表面逸出几率和电子扩散长度从标准三代到四代不断提高，这些性能的改善导致了GaAs光电阴极灵敏度的提高。
  14. Effects of Surface Recombination Velocity and Junction Depth on the Performance of n~+-p Diffused Junction Silicon Solar Cells
    表面复合速度和结深对硅扩散n~+-p结太阳电池性能的影响
  15. A numerical method is used to study the function relationships of the open-circuit voltage of induced-junction solar cells with substrate doping, charges in the insulator layer and surface recombination velocity.
    本文应用数值计算方法研究了感应反型层太阳电池的开路电压与衬底掺杂水平、介质层固定正电荷密度及表面复合速度等的函数关系。
  16. The calculation of β F indicates that the carrier recombination at polysilicon/ monosilicon emitter interface for the studied devices is very strong, and the value of recombination velocity S_p is up to 106cm/ s.
    β＿F的计算表明，所研究器件的多晶硅／硅界面复合较强，复合速度S＿p达到10￣6cm／s。
  17. The Solution and Application of Minority Carrier Continuity Equation for a Semiconductor Wafer with Different Surface Recombination Velocity
    有相异表面复合速度时半导体薄片少子连续方程的解及应用
  18. A method for the extraction of diffusion length and surface recombination velocity of gap from EBIC line scan
    EBIC测定GaP的少子扩散长度和表面复合速度
  19. The Theoretical Analyzation and Calculation About the Effects of Grain Size, Thickness and Back Surface Recombination Velocity on the Performances of Poly Si Thin Film MIS Schottky Solar Cells
    晶粒度、厚度和背表面复合速度对MISSchottky势垒多晶Si薄膜太阳电池性能影响的理论分析和计算
  20. The Effective Recombination Velocity at the NN~+ Interface in Buried Layer and n Epilayer-n~+ Substrate Structure
    埋层和外延NN~+结构高低结界面的有效复合速度
  21. From the spectrum responses curve fitting, obtained parameters are the minority carrier diffusion lengths in three zones, the thickness of AlGaAs, the junction depth, the recombination velocity at front surface and interface, etc.
    从SR拟合求得三个区的少子扩散长度、AlGaAs层厚度、结深、前表面和界面复合速度等七个结构参数。
  22. Study on Surface Recombination Velocity and Diffusion Length in Semiconductors by Microwave Photoconductivity Spectrum
    用微波光电导谱研究半导体薄片的少子扩散长度和表面复合速度
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